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FDS6875 - Dual P-Channel MOSFET

FDS6875 Description

FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General .
Features These P-Channel 2.

FDS6875 Features

* These P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics

FDS6875 Applications

* load switching and power management, battery charging and protection circuits. -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.

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Dual P-Channel MOSFET ON Semiconductor
ON Semiconductor FDS6875-like datasheet