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FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management,
battery charging and protection circuits.
-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON). High power and current handling capability.
FDS6875 Datasheet
