FDS6875
FDS6875 is Dual P-Channel MOSFET manufactured by onsemi.
FDS6875 Dual P-Channel 2.5V Specified Power Trench TM MOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
Low gate charge (23n C typical).
High performance trench technology for extremely low RDS(ON). High power and current handling capability.
SOT-23
Super SOTTM-6
Super SOTTM-8
D2
D2
D1 D1
FD68S75
SO-8
G2
S2 pin 1
G1 S1
SO-8
SOT-223
5 6 7 8
SOIC-16
4 3 2...
